UnitedSiC UF3C High-Performance SiC FETs
United Silicon Carbide UF3C High-Performance SiC FETs are cascode products that co-package high-performance G3 SiC JFETs with a cascode optimized Si MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge and are excellent for switching inductive loads, and any application requiring standard gate drive. They are available in 650V and 1200V versions and come in TO-247-3L, TO-247-4L, and D²PAK-3L packages. Typical applications include EV charging, PV inverters, switch mode power supplies, power factor correction modules, motor drives, and induction heating.
Features
Excellent body diode performance (Vf <2V)Drive with any Si and/or SiC gate drive voltageHigh performance cascode configurationEasy drop-in replacement for IGBTs, Si, and other SiC MOSFETsInnovative cascode configuration enables Si and SiC gate voltage compatibilityExcellent reverse recoverySuperior thermal performanceIntegrated ESD and gate protection
Applications
Electric VehiclesBattery ChargersTelecom and Server PSUs
Unitedsic Newest
United Silicon Carbide UF3C High-Performance SiC FETs are cascode products that co-package high-performance G3 SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today.
Date: 2018-10-29United Silicon Carbide UJ3N JFET Transistors are high-performance, SiC Normally-On Junction Gate Field-Effect Transistors with options ranging from 650V to 1700V.
Date: 2018-10-29UnitedSiC SiC FETs are UJ3C and UF3C series of silicon carbide FETs that are based on a unique cascode configuration. Now Available at Mouser.
Date: 2018-08-13UnitedSiC UJ3D Series 650V and 1200V (Silicon-Carbide) Schottky Diodes are designed to take advantage of SiC superior physical characteristics over standard silicon, with 4 times better dynamic characteristics and 15% less forward voltage (VF).
Date: 2018-04-26